All Transistors. EMH51 Datasheet

 

EMH51 Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMH51
   SMD Transistor Code: H51
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SC-107C

 EMH51 Transistor Equivalent Substitute - Cross-Reference Search

   

EMH51 Datasheet (PDF)

 ..1. Size:624K  rohm
 emh51.pdf

EMH51 EMH51

EMH51DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R122kEMH51R2 (SC-107C) 22k lFeatures lInner circuitl l1) Two DTC024E chips in a EMT6 package.2) Transister elements are independent, eliminating

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N917-46

 

 
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