EML20 Datasheet. Specs and Replacement
Type Designator: EML20
SMD Transistor Code: L20
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: EMT6
EML20 Substitution
- BJT ⓘ Cross-Reference Search
EML20 datasheet
EML20 Transistors General purpose transistor (isolated transistor and diode) EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. External dimensions (Unit mm) Applications DC / DC converter EMT6 Motor driver 1.6 0.5 1.0 Features 0.5 0.5 ( ) ( ) ( ) 6 5 4 1) Tr NPN digital transistor Di Low VF 2) Mounting possible with EMT3 automatic mounti... See More ⇒
Detailed specifications: EMH6, EMH60, EMH61, EMH6FHA, EMH75, EMH9, EMH9FHA, EML17, 2SD313, FA4A3Q, FA4A4L, FA4A4M, FA4A4P, FA4A4Z, FA4F3M, FA4F3P, FA4F3R
Keywords - EML20 pdf specs
EML20 cross reference
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History: DTD113ZS
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