EML20 Datasheet, Equivalent, Cross Reference Search
Type Designator: EML20
SMD Transistor Code: L20
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.12
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: EMT6
EML20 Transistor Equivalent Substitute - Cross-Reference Search
EML20 Datasheet (PDF)
eml20.pdf
EML20TransistorsGeneral purpose transistor (isolated transistor and diode) EML20DTC123J A and RB521S-30 are housed independently in a EMT6 package. External dimensions (Unit : mm) ApplicationsDC / DC converter EMT6Motor driver 1.60.51.0 Features0.5 0.5( ) ( ) ( )6 5 41) Tr : NPN digital transistor Di : Low VF2) Mounting possible with EMT3 automatic mounti
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
