All Transistors. FA4F4N Datasheet

 

FA4F4N Datasheet and Replacement


   Type Designator: FA4F4N
   SMD Transistor Code: AJ1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SC-59
 

 FA4F4N Substitution

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FA4F4N Datasheet (PDF)

 ..1. Size:514K  renesas
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FA4F4N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FJP13007TU | MJD127T4G

Keywords - FA4F4N transistor datasheet

 FA4F4N cross reference
 FA4F4N equivalent finder
 FA4F4N lookup
 FA4F4N substitution
 FA4F4N replacement

 

 
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