FA4L3Z Datasheet. Specs and Replacement

Type Designator: FA4L3Z

SMD Transistor Code: AF1

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: SC-59

 FA4L3Z Substitution

- BJT ⓘ Cross-Reference Search

 

FA4L3Z datasheet

 ..1. Size:514K  renesas

 fa4a3q fa4a4l fa4a4m fa4a4p fa4a4z fa4f3m fa4f3p fa4f3r fa4f4m fa4f4n fa4f4z fa4l3m fa4l3n fa4l3z fa4l4k fa4l4l fa4l4m fa4l4z.pdf pdf_icon

FA4L3Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: FA4F3M, FA4F3P, FA4F3R, FA4F4M, FA4F4N, FA4F4Z, FA4L3M, FA4L3N, 13005, FA4L4K, FA4L4L, FA4L4M, FA4L4Z, FB1A3M, FB1A4A, FB1A4M, FB1F3P

Keywords - FA4L3Z pdf specs

 FA4L3Z cross reference

 FA4L3Z equivalent finder

 FA4L3Z pdf lookup

 FA4L3Z substitution

 FA4L3Z replacement