All Transistors. FA4L4L Datasheet

 

FA4L4L Datasheet and Replacement


   Type Designator: FA4L4L
   SMD Transistor Code: AK1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SC-59
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FA4L4L Datasheet (PDF)

 ..1. Size:514K  renesas
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FA4L4L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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History: FMMT723 | 2N3322 | 2N2275 | BC158A | 2SB48 | 2SC6094 | AC123GN

Keywords - FA4L4L transistor datasheet

 FA4L4L cross reference
 FA4L4L equivalent finder
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