FB1A4A Datasheet and Replacement
Type Designator: FB1A4A
SMD Transistor Code: P30
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SC-59
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FB1A4A Datasheet (PDF)
fb1a3m fb1a4a fb1a4m fb1f3p fb1j3p fb1l2q fb1l3n.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA1262 | 2SA1407E | T11 | 2SC3712 | 2SC3235 | NB221YX | 2N2872
Keywords - FB1A4A transistor datasheet
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History: 2SA1262 | 2SA1407E | T11 | 2SC3712 | 2SC3235 | NB221YX | 2N2872



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