All Transistors. FB1L2Q Datasheet

 

FB1L2Q Datasheet and Replacement


   Type Designator: FB1L2Q
   SMD Transistor Code: P31
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 0.47 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 135
   Noise Figure, dB: -
   Package: SC-59
 

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FB1L2Q Datasheet (PDF)

 ..1. Size:450K  renesas
 fb1a3m fb1a4a fb1a4m fb1f3p fb1j3p fb1l2q fb1l3n.pdf pdf_icon

FB1L2Q

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: FA4L4L , FA4L4M , FA4L4Z , FB1A3M , FB1A4A , FB1A4M , FB1F3P , FB1J3P , D882P , FB1L3N , FN4A3Q , FN4A4L , FN4A4M , FN4A4P , FN4A4Z , FN4F3M , FN4F3P .

History: 2N186 | 2N5786 | NTE252 | 2SD602 | NTE2402 | BD899

Keywords - FB1L2Q transistor datasheet

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