All Transistors. FN4A3Q Datasheet

 

FN4A3Q Datasheet and Replacement


   Type Designator: FN4A3Q
   SMD Transistor Code: NG1
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SC-59
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FN4A3Q Datasheet (PDF)

 ..1. Size:523K  renesas
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FN4A3Q

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3712 | 2SA1407E | T11 | 2SA1262 | TN4033 | NB221YX | 2N2872

Keywords - FN4A3Q transistor datasheet

 FN4A3Q cross reference
 FN4A3Q equivalent finder
 FN4A3Q lookup
 FN4A3Q substitution
 FN4A3Q replacement

 

 
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