FN4A4Z Datasheet. Specs and Replacement
Type Designator: FN4A4Z
SMD Transistor Code: NL1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 135
Package: SC-59
FN4A4Z Substitution
- BJT ⓘ Cross-Reference Search
FN4A4Z datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: FB1F3P, FB1J3P, FB1L2Q, FB1L3N, FN4A3Q, FN4A4L, FN4A4M, FN4A4P, BC547B, FN4F3M, FN4F3P, FN4F3R, FN4F4M, FN4F4N, FN4F4Z, FN4L3M, FN4L3N
Keywords - FN4A4Z pdf specs
FN4A4Z cross reference
FN4A4Z equivalent finder
FN4A4Z pdf lookup
FN4A4Z substitution
FN4A4Z replacement
