FP1F3P Datasheet. Specs and Replacement

Type Designator: FP1F3P

SMD Transistor Code: S33

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT23-3

 FP1F3P Substitution

- BJT ⓘ Cross-Reference Search

 

FP1F3P datasheet

 ..1. Size:262K  renesas

 fp1a3m fp1a4a fp1a4m fp1f3p fp1j3p fp1l2q fp1l3n.pdf pdf_icon

FP1F3P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: FN4L3Z, FN4L4K, FN4L4L, FN4L4M, FN4L4Z, FP1A3M, FP1A4A, FP1A4M, BD222, FP1J3P, FP1L2Q, FP1L3N, GA4A3Q, GA4A4L, GA4A4M, GA4A4P, GA4A4Z

Keywords - FP1F3P pdf specs

 FP1F3P cross reference

 FP1F3P equivalent finder

 FP1F3P pdf lookup

 FP1F3P substitution

 FP1F3P replacement