FP1L2Q Datasheet. Specs and Replacement

Type Designator: FP1L2Q

SMD Transistor Code: S31

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 0.47 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT23-3

 FP1L2Q Substitution

- BJT ⓘ Cross-Reference Search

 

FP1L2Q datasheet

 ..1. Size:262K  renesas

 fp1a3m fp1a4a fp1a4m fp1f3p fp1j3p fp1l2q fp1l3n.pdf pdf_icon

FP1L2Q

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: FN4L4L, FN4L4M, FN4L4Z, FP1A3M, FP1A4A, FP1A4M, FP1F3P, FP1J3P, 2SC5200, FP1L3N, GA4A3Q, GA4A4L, GA4A4M, GA4A4P, GA4A4Z, GA4F3M, GA4F3P

Keywords - FP1L2Q pdf specs

 FP1L2Q cross reference

 FP1L2Q equivalent finder

 FP1L2Q pdf lookup

 FP1L2Q substitution

 FP1L2Q replacement