GA4A3Q Datasheet. Specs and Replacement

Type Designator: GA4A3Q

SMD Transistor Code: AG1

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SC-70

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GA4A3Q datasheet

 ..1. Size:514K  renesas

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GA4A3Q

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: FN4L4Z, FP1A3M, FP1A4A, FP1A4M, FP1F3P, FP1J3P, FP1L2Q, FP1L3N, BD139, GA4A4L, GA4A4M, GA4A4P, GA4A4Z, GA4F3M, GA4F3P, GA4F3R, GA4F4M

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