GA4L3Z Specs and Replacement
Type Designator: GA4L3Z
SMD Transistor Code: AF1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 135
Package: SC-70
GA4L3Z Substitution
- BJT ⓘ Cross-Reference Search
GA4L3Z datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: GA4F3M, GA4F3P, GA4F3R, GA4F4M, GA4F4N, GA4F4Z, GA4L3M, GA4L3N, 2SA1943, GA4L4K, GA4L4L, GA4L4M, GA4L4Z, GN4A3Q, GN4A4L, GN4A4M, GN4A4P
Keywords - GA4L3Z pdf specs
GA4L3Z cross reference
GA4L3Z equivalent finder
GA4L3Z pdf lookup
GA4L3Z substitution
GA4L3Z replacement
