All Transistors. GA4L4Z Datasheet

 

GA4L4Z Datasheet and Replacement


   Type Designator: GA4L4Z
   SMD Transistor Code: AN1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 135
   Noise Figure, dB: -
   Package: SC-70
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GA4L4Z Datasheet (PDF)

 ..1. Size:514K  renesas
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GA4L4Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ECG51 | KTC2553 | 2SC5065 | AU108F | KT8126A | 2SB299 | BLX65

Keywords - GA4L4Z transistor datasheet

 GA4L4Z cross reference
 GA4L4Z equivalent finder
 GA4L4Z lookup
 GA4L4Z substitution
 GA4L4Z replacement

 

 
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