GN4A4Z Specs and Replacement

Type Designator: GN4A4Z

SMD Transistor Code: NL1

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: SC-70

 GN4A4Z Substitution

- BJT ⓘ Cross-Reference Search

 

GN4A4Z datasheet

 ..1. Size:523K  renesas

 gn4a3q gn4a4l gn4a4m gn4a4p gn4a4z gn4f3m gn4f3p gn4f3r gn4f4m gn4f4n gn4f4z gn4l3m gn4l3n gn4l3z gn4l4k gn4l4l gn4l4m gn4l4z.pdf pdf_icon

GN4A4Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: GA4L4K, GA4L4L, GA4L4M, GA4L4Z, GN4A3Q, GN4A4L, GN4A4M, GN4A4P, 13009, GN4F3M, GN4F3P, GN4F3R, GN4F4M, GN4F4N, GN4F4Z, GN4L3M, GN4L3N

Keywords - GN4A4Z pdf specs

 GN4A4Z cross reference

 GN4A4Z equivalent finder

 GN4A4Z pdf lookup

 GN4A4Z substitution

 GN4A4Z replacement