GN4L3N Specs and Replacement
Type Designator: GN4L3N
SMD Transistor Code: NE1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: SC-70
GN4L3N Substitution
- BJT ⓘ Cross-Reference Search
GN4L3N datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: GN4A4Z, GN4F3M, GN4F3P, GN4F3R, GN4F4M, GN4F4N, GN4F4Z, GN4L3M, 2SC2073, GN4L3Z, GN4L4K, GN4L4L, GN4L4M, GN4L4Z, HBA114ES6R, HBA114TS6R, HBA143ES6R
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