GN4L4L Datasheet and Replacement
Type Designator: GN4L4L
SMD Transistor Code: NK1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SC-70
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GN4L4L Datasheet (PDF)
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MMBT4122 | 2N3038 | 2SA1051A | 2SA843 | 2N6230 | 2SB464 | 2N1963
Keywords - GN4L4L transistor datasheet
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History: MMBT4122 | 2N3038 | 2SA1051A | 2SA843 | 2N6230 | 2SB464 | 2N1963



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