GN4L4Z Specs and Replacement
Type Designator: GN4L4Z
SMD Transistor Code: NN1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 135
Package: SC-70
GN4L4Z Substitution
- BJT ⓘ Cross-Reference Search
GN4L4Z datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: GN4F4N, GN4F4Z, GN4L3M, GN4L3N, GN4L3Z, GN4L4K, GN4L4L, GN4L4M, 2SC4793, HBA114ES6R, HBA114TS6R, HBA143ES6R, HBA143TS6R, HBA143ZS6R, HBA144ES6R, HBC114ES6R, HBC114TS6R
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