All Transistors. HD1A4A Datasheet

 

HD1A4A Datasheet, Equivalent, Cross Reference Search


   Type Designator: HD1A4A
   SMD Transistor Code: LX
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R2 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89

 HD1A4A Transistor Equivalent Substitute - Cross-Reference Search

   

HD1A4A Datasheet (PDF)

 ..1. Size:514K  renesas
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HD1A4A HD1A4A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MJD50G

 

 
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