HD1A4M Specs and Replacement
Type Designator: HD1A4M
SMD Transistor Code: LS
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
HD1A4M Substitution
- BJT ⓘ Cross-Reference Search
HD1A4M datasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: HBCA123JS6R, HBCA124ES6R, HBCA143TC6, HBCA143TS6R, HBCA144EC6, HBCA144ES6R, HD1A3M, HD1A4A, 2N4401, HD1F2Q, HD1F3P, HD1L2Q, HD1L3N, HD2A3M, HD2A4A, HD2A4M, HD2F2Q
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