HD2A4A Specs and Replacement
Type Designator: HD2A4A
SMD Transistor Code: LY
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
HD2A4A Substitution
- BJT ⓘ Cross-Reference Search
HD2A4A datasheet
hd2a3m hd2a4a hd2a4m hd2f2q hd2f3p hd2l2q hd2l3n.pdf ![]()
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: HD1A3M, HD1A4A, HD1A4M, HD1F2Q, HD1F3P, HD1L2Q, HD1L3N, HD2A3M, TIP2955, HD2A4M, HD2F2Q, HD2F3P, HD2L2Q, HD2L3N, HE1A4A, LDTA113TKT1G, LDTA113ZET1G
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