All Transistors. LDTC123JET1G Datasheet

 

LDTC123JET1G Datasheet and Replacement


   Type Designator: LDTC123JET1G
   SMD Transistor Code: 8M
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-89
 

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LDTC123JET1G Datasheet (PDF)

 6.1. Size:545K  lrc
 ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf pdf_icon

LDTC123JET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 6.2. Size:545K  lrc
 ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf pdf_icon

LDTC123JET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.1. Size:223K  lrc
 ldtc123tkt1g.pdf pdf_icon

LDTC123JET1G

 7.2. Size:334K  lrc
 ldtc123yet1g.pdf pdf_icon

LDTC123JET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

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Datasheet: LDTC114YET1G , LDTC114YM3T5G , LDTC115EET1G , LDTC115EM3T5G , LDTC115GET1G , LDTC115TET1G , LDTC123EET1G , LDTC123EM3T5G , S9014 , LDTC123JM3T5G , LDTC123TKT1G , LDTC123YET1G , LDTC124EET1G , LDTC124EM3T5G , LDTC124GET1G , LDTC124TET1G , LDTC124XET1G .

History: 2T9139 | 2PB710AQ | MJE2011 | MMBTA28 | MMBTA13LT1 | MJE3439 | KBC807-25

Keywords - LDTC123JET1G transistor datasheet

 LDTC123JET1G cross reference
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