LDTC124EM3T5G Specs and Replacement
Type Designator: LDTC124EM3T5G
SMD Transistor Code: 8B
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT-723
LDTC124EM3T5G Substitution
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LDTC124EM3T5G datasheet
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic ... See More ⇒
Detailed specifications: LDTC115TET1G, LDTC123EET1G, LDTC123EM3T5G, LDTC123JET1G, LDTC123JM3T5G, LDTC123TKT1G, LDTC123YET1G, LDTC124EET1G, 2SC4793, LDTC124GET1G, LDTC124TET1G, LDTC124XET1G, LDTC124XM3T5G, LDTC125TET1G, LDTC143EET1G, LDTC143EM3T5G, LDTC143TET1G
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