LDTC143TET1G Specs and Replacement
Type Designator: LDTC143TET1G
SMD Transistor Code: 8F
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SC-89
LDTC143TET1G Substitution
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LDTC143TET1G datasheet
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic ... See More ⇒
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTC143XET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist ... See More ⇒
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic ... See More ⇒
Detailed specifications: LDTC124EM3T5G, LDTC124GET1G, LDTC124TET1G, LDTC124XET1G, LDTC124XM3T5G, LDTC125TET1G, LDTC143EET1G, LDTC143EM3T5G, TIP35C, LDTC143TM3T5G, LDTC143XET1G, LDTC143ZET1G, LDTC143ZM3T5G, LDTC144EET1G, LDTC144EM3T5G, LDTC144GET1G, LDTC144TET1G
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