LDTC144EM3T5G Specs and Replacement
Type Designator: LDTC144EM3T5G
SMD Transistor Code: 8C
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT-723
LDTC144EM3T5G Substitution
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LDTC144EM3T5G datasheet
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic ... See More ⇒
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTC144TET1G with Monolithic Bias Resistor Network S-LDTC144TET1G Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors... See More ⇒
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Detailed specifications: LDTC143EET1G, LDTC143EM3T5G, LDTC143TET1G, LDTC143TM3T5G, LDTC143XET1G, LDTC143ZET1G, LDTC143ZM3T5G, LDTC144EET1G, 2SD313, LDTC144GET1G, LDTC144TET1G, LDTC144TM3T5G, LDTC144VET1G, LDTC144WET1G, LDTD113EET1G, LDTD113ZET1G, LDTD114EET1G
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History: BC559C | HN1C03FU | LMUN5111DW1T1G | DTB113ZCA | 2N542A | DTB114TK | DTA143XUAFRA
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