LMUN2114LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LMUN2114LT1G
SMD Transistor Code: A6D
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.246
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-23
LMUN2114LT1G Transistor Equivalent Substitute - Cross-Reference Search
LMUN2114LT1G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLMUN2110LT1GPNP Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network2consisting of two
lmun2135lt1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLMUN2135LT1GS-LMUN2135LT1GPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Network 3This new series of digital transistors is designed to replace a single1device and its external resistor bias network. The BRT (Bias Resistor2Transistor) contains a single transistor with a monolithic bias networkconsisting
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LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
