LMUN5231DW1T1G Datasheet and Replacement
Type Designator: LMUN5231DW1T1G
SMD Transistor Code: 7H
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.187 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: SOT-363
LMUN5231DW1T1G Substitution
LMUN5231DW1T1G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.Dual Bias ResistorTransistorsLMUN5211DW1T1GNPN Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor NetworkS-LMUN5211DW1T1GSeriesThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. These65digital transistor
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorLMUN5211T1GNPN Silicon Surface Mount TransistorSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network con- 2sisting of two r
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LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are
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Datasheet: LMUN5214DW1T1G , LMUN5214T1G , LMUN5215DW1T1G , LMUN5215T1G , LMUN5216DW1T1G , LMUN5216T1G , LMUN5230DW1T1G , LMUN5230T1G , S8550 , LMUN5231T1G , LMUN5232DW1T1G , LMUN5232T1G , LMUN5233DW1T1G , LMUN5233T1G , LMUN5234DW1T1G , LMUN5234T1G , LMUN5235DW1T1G .
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