All Transistors. KSR1202 Datasheet

 

KSR1202 Datasheet and Replacement


   Type Designator: KSR1202
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO92S
 

 KSR1202 Substitution

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KSR1202 Datasheet (PDF)

 ..1. Size:40K  samsung
 ksr1202.pdf pdf_icon

KSR1202

KSR1202 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =10 , R2=10 ) Complement to KSR2202ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

 8.1. Size:41K  samsung
 ksr1207.pdf pdf_icon

KSR1202

KSR1207 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =22 , R2=47 ) Complement to KSR2207ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-

 8.2. Size:41K  samsung
 ksr1208.pdf pdf_icon

KSR1202

KSR1208 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47 , R2=22 ) Complement to KSR2208ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-

 8.3. Size:40K  samsung
 ksr1201.pdf pdf_icon

KSR1202

KSR1201 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=4.7 ) Complement to KSR2201ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Bas

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Datasheet: LUMA5NT1G , LUMC3NT1G , LUMF23NDW1T1G , LUMG10NT1G , LUMG2NT1G , LUMG3NT1G , EMA8 , KSR1201 , 2SD669A , KSR1203 , KSR1204 , KSR1205 , KSR1206 , KSR1207 , KSR1208 , KSR1209 , KSR1210 .

History: PBSS302PD | PH1214-30EL | ECG369 | ET701 | MP1531 | ECG373 | MJE4340

Keywords - KSR1202 transistor datasheet

 KSR1202 cross reference
 KSR1202 equivalent finder
 KSR1202 lookup
 KSR1202 substitution
 KSR1202 replacement

 

 
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