All Transistors. KSR1204 Datasheet

 

KSR1204 Datasheet and Replacement


   Type Designator: KSR1204
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: TO92S
 

 KSR1204 Substitution

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KSR1204 Datasheet (PDF)

 ..1. Size:41K  samsung
 ksr1204.pdf pdf_icon

KSR1204

KSR1204 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47 , R2=47 ) Complement to KSR2204ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

 8.1. Size:41K  samsung
 ksr1207.pdf pdf_icon

KSR1204

KSR1207 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =22 , R2=47 ) Complement to KSR2207ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-

 8.2. Size:41K  samsung
 ksr1208.pdf pdf_icon

KSR1204

KSR1208 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47 , R2=22 ) Complement to KSR2208ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-

 8.3. Size:40K  samsung
 ksr1201.pdf pdf_icon

KSR1204

KSR1201 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=4.7 ) Complement to KSR2201ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Bas

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Datasheet: LUMF23NDW1T1G , LUMG10NT1G , LUMG2NT1G , LUMG3NT1G , EMA8 , KSR1201 , KSR1202 , KSR1203 , BC556 , KSR1205 , KSR1206 , KSR1207 , KSR1208 , KSR1209 , KSR1210 , KSR1211 , KSR1212 .

History: MA0461 | 2SD626 | 2SC2759 | MRF835 | 2SD628H | 2SB1119R | RN2910

Keywords - KSR1204 transistor datasheet

 KSR1204 cross reference
 KSR1204 equivalent finder
 KSR1204 lookup
 KSR1204 substitution
 KSR1204 replacement

 

 
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