KSR1206 PDF and Equivalents Search

 

KSR1206 Specs and Replacement

Type Designator: KSR1206

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: TO92S

 KSR1206 Substitution

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KSR1206 datasheet

 ..1. Size:40K  samsung

ksr1206.pdf pdf_icon

KSR1206

KSR1206 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =10 , R2=47 ) Complement to KSR2206 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-... See More ⇒

 8.1. Size:41K  samsung

ksr1207.pdf pdf_icon

KSR1206

KSR1207 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =22 , R2=47 ) Complement to KSR2207 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-... See More ⇒

 8.2. Size:41K  samsung

ksr1208.pdf pdf_icon

KSR1206

KSR1208 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47 , R2=22 ) Complement to KSR2208 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-... See More ⇒

 8.3. Size:40K  samsung

ksr1201.pdf pdf_icon

KSR1206

KSR1201 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=4.7 ) Complement to KSR2201 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Bas... See More ⇒

Detailed specifications: LUMG2NT1G , LUMG3NT1G , EMA8 , KSR1201 , KSR1202 , KSR1203 , KSR1204 , KSR1205 , 2222A , KSR1207 , KSR1208 , KSR1209 , KSR1210 , KSR1211 , KSR1212 , KSR1213 , KSR1214 .

History: MJE350

Keywords - KSR1206 pdf specs

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