All Transistors. KSR1206 Datasheet

 

KSR1206 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KSR1206
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: TO92S

 KSR1206 Transistor Equivalent Substitute - Cross-Reference Search

   

KSR1206 Datasheet (PDF)

 ..1. Size:40K  samsung
ksr1206.pdf

KSR1206
KSR1206

KSR1206 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =10 , R2=47 ) Complement to KSR2206ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-

 8.1. Size:41K  samsung
ksr1207.pdf

KSR1206
KSR1206

KSR1207 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =22 , R2=47 ) Complement to KSR2207ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-

 8.2. Size:41K  samsung
ksr1208.pdf

KSR1206
KSR1206

KSR1208 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47 , R2=22 ) Complement to KSR2208ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter-

 8.3. Size:40K  samsung
ksr1201.pdf

KSR1206
KSR1206

KSR1201 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=4.7 ) Complement to KSR2201ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Bas

 8.4. Size:40K  samsung
ksr1203.pdf

KSR1206
KSR1206

KSR1203 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =22 , R2=22 ) Complement to KSR2203ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

 8.5. Size:41K  samsung
ksr1204.pdf

KSR1206
KSR1206

KSR1204 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47 , R2=47 ) Complement to KSR2204ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

 8.6. Size:40K  samsung
ksr1202.pdf

KSR1206
KSR1206

KSR1202 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =10 , R2=10 ) Complement to KSR2202ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

 8.7. Size:35K  samsung
ksr1209.pdf

KSR1206
KSR1206

KSR1209 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7 ) Complement to KSR2209ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Voltage VCEO 40VEmitter-Base Volt

 8.8. Size:40K  samsung
ksr1205.pdf

KSR1206
KSR1206

KSR1205 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=10 ) Complement to KSR2205ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 50VEmitter

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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