All Transistors. KSR1210 Datasheet

 

KSR1210 Datasheet, Equivalent, Cross Reference Search

Type Designator: KSR1210

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92S

KSR1210 Transistor Equivalent Substitute - Cross-Reference Search

 

KSR1210 Datasheet (PDF)

1.1. ksr1210.pdf Size:35K _samsung

KSR1210
KSR1210

KSR1210 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR2210 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5

4.1. ksr1212.pdf Size:18K _samsung

KSR1210

KSR1212 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR2212 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5

4.2. ksr1214.pdf Size:19K _samsung

KSR1210

KSR1214 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=47 ) Complement to KSR2214 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage

 4.3. ksr1211.pdf Size:16K _samsung

KSR1210

KSR1211 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR2211 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5

4.4. ksr1213.pdf Size:19K _samsung

KSR1210

KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2 , R2=47 ) Complement to KSR2213 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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