All Transistors. KSR2205 Datasheet

 

KSR2205 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KSR2205
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO92S

 KSR2205 Transistor Equivalent Substitute - Cross-Reference Search

   

KSR2205 Datasheet (PDF)

 ..1. Size:40K  samsung
ksr2205.pdf

KSR2205
KSR2205

KSR2205 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7, R2=10 ) Complement to KSR1205ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Bas

 8.1. Size:40K  samsung
ksr2204.pdf

KSR2205
KSR2205

KSR2204 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =47, R2=47 ) Complement to KSR1204ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.2. Size:39K  samsung
ksr2207.pdf

KSR2205
KSR2205

KSR2207 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92S Built in bias Resistor (R1=22, R2=47 ) Complement to KSR1207ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base V

 8.3. Size:39K  samsung
ksr2206.pdf

KSR2205
KSR2205

KSR2206 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =10, R2=47 ) Complement to KSR1206ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.4. Size:40K  samsung
ksr2201.pdf

KSR2205
KSR2205

KSR2201 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7, R2=4.7 ) Complement to KSR1201ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Ba

 8.5. Size:39K  samsung
ksr2203.pdf

KSR2205
KSR2205

KSR2203 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =22, R2=22 ) Complement to KSR1203ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.6. Size:34K  samsung
ksr2209.pdf

KSR2205
KSR2205

KSR2209 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7 ) Complement to KSR1209ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage

 8.7. Size:40K  samsung
ksr2202.pdf

KSR2205
KSR2205

KSR2202 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =10, R2=10 ) Complement to KSR1202ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

 8.8. Size:40K  samsung
ksr2208.pdf

KSR2205
KSR2205

KSR2208 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47, R2=22 ) Complement to KSR1208ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N164A

 

 
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