KSR2213 Specs and Replacement

Type Designator: KSR2213

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: TO92S

 KSR2213 Substitution

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KSR2213 datasheet

 ..1. Size:19K  samsung

ksr2213.pdf pdf_icon

KSR2213

KSR2213 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2, R2=47 ) Complement to KSR1213 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base... See More ⇒

 8.1. Size:33K  samsung

ksr2210.pdf pdf_icon

KSR2213

KSR2210 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92S Built in bias Resistor (R=10 ) Complement to KSR1210 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V... See More ⇒

 8.2. Size:17K  samsung

ksr2212.pdf pdf_icon

KSR2213

KSR2212 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR1212 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage ... See More ⇒

 8.3. Size:17K  samsung

ksr2211.pdf pdf_icon

KSR2213

KSR2211 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR1211 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage ... See More ⇒

Detailed specifications: KSR2205, KSR2206, KSR2207, KSR2208, KSR2209, KSR2210, KSR2211, KSR2212, MJE350, KSR2214, M54513FP, M54513P, M54522FP, MMBTRC101SS, MMBTRC102SS, MMBTRC103SS, MMBTRC104SS

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