MMUN2233LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMUN2233LT1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-23
MMUN2233LT1 Transistor Equivalent Substitute - Cross-Reference Search
MMUN2233LT1 Datasheet (PDF)
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Size:242K _upd
Lead Free RoHS Compliant MEI
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MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http://onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor
1.3. nsvmmun2233lt3g.pdf Size:115K _onsemi
MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BR
Datasheet: MMUN2217LT1G , MMUN2230L , MMUN2230LT1 , MMUN2230LT1G , MMUN2231LT1 , MMUN2231LT1G , MMUN2232LT1 , MMUN2232LT1G , B772 , MMUN2233LT1G , MMUN2234LT1 , MMUN2234LT1G , MMUN2235L , MMUN2236L , MMUN2236LT1G , MMUN2237L , MMUN2237LT1G .
