2SA1052C
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1052C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 135
°C
Transition Frequency (ft): 280
MHz
Collector Capacitance (Cc): 3.3
pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package:
TO236
2SA1052C
Transistor Equivalent Substitute - Cross-Reference Search
2SA1052C
Datasheet (PDF)
7.1. Size:24K hitachi
2sa1052.pdf
2SA1052Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1052Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector powe
7.2. Size:809K kexin
2sa1052.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1052SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features1 2Low frequency amplifier+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -30 VCollector to emitter voltage VCEO -30 VEmitter to base volta
8.1. Size:146K jmnic
2sa1051.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1051 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
8.2. Size:145K jmnic
2sa1050.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1050 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
8.3. Size:198K inchange semiconductor
2sa1051.pdf
isc Silicon PNP Power Transistor 2SA1051DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.4. Size:198K inchange semiconductor
2sa1050.pdf
isc Silicon PNP Power Transistor 2SA1050DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2460Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Datasheet: 2SA1049GR
, 2SA105
, 2SA1050
, 2SA1050A
, 2SA1051
, 2SA1051A
, 2SA1052
, 2SA1052B
, 2SC2383Y
, 2SA1052D
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, 2SA1054
, 2SA1055
, 2SA1056
, 2SA1057
, 2SA1058
, 2SA1059
.