2SA1057 Specs and Replacement
Type Designator: 2SA1057
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 4000 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO131
2SA1057 Substitution
- BJT ⓘ Cross-Reference Search
2SA1057 datasheet
2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1052 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE 100 mA Collector powe... See More ⇒
SMD Type or SMD Type TransistICs PNP Transistors 2SA1052 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features 1 2 Low frequency amplifier +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -30 V Collector to emitter voltage VCEO -30 V Emitter to base volta... See More ⇒
Detailed specifications: 2SA1052, 2SA1052B, 2SA1052C, 2SA1052D, 2SA1053, 2SA1054, 2SA1055, 2SA1056, D880, 2SA1058, 2SA1059, 2SA106, 2SA1060, 2SA1061, 2SA1062, 2SA1063, 2SA1064
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