PBRN113EK Datasheet. Specs and Replacement

Type Designator: PBRN113EK  📄📄 

SMD Transistor Code: G1

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 1 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT-346

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PBRN113EK datasheet

 ..1. Size:152K  nxp

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PBRN113EK

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

 6.1. Size:147K  nxp

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PBRN113EK

PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒

 7.1. Size:150K  nxp

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PBRN113EK

PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k Rev. 01 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113ZK SOT346 SC-59A TO-236 PBRN... See More ⇒

 7.2. Size:154K  nxp

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PBRN113EK

PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k Rev. 01 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113ZK SOT346 SC-59A TO-236 PBRN... See More ⇒

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Detailed specifications: MUN5331DW1, MUN5331DW1T1G, MUN5332DW1T1G, MUN5333DW1T1G, MUN5334DW1T1G, MUN5335DW1T1G, MUN5336DW1, MUN5336DW1T1G, 2SA1943, PBRN113ES, PBRN113ZK, PBRN113ZS, PBRN123EK, PBRN123ES, PBRN123YK, PBRN123YS, PDTA113EK

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