PBRN113ES Datasheet. Specs and Replacement
Type Designator: PBRN113ES 📄📄
SMD Transistor Code: N113ES
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 1 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT-54
PBRN113ES Substitution
- BJT ⓘ Cross-Reference Search
PBRN113ES datasheet
pbrn113es pbrn113e pbrn113ek.pdf 
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k Rev. 01 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113EK SOT346 SC-59A TO-236 PBRN113ES... See More ⇒
PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k Rev. 01 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113ZK SOT346 SC-59A TO-236 PBRN... See More ⇒
pbrn113zs pbrn113z pbrn113zk.pdf
PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 10 k Rev. 01 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN113ZK SOT346 SC-59A TO-236 PBRN... See More ⇒
Detailed specifications: MUN5331DW1T1G, MUN5332DW1T1G, MUN5333DW1T1G, MUN5334DW1T1G, MUN5335DW1T1G, MUN5336DW1, MUN5336DW1T1G, PBRN113EK, TIP122, PBRN113ZK, PBRN113ZS, PBRN123EK, PBRN123ES, PBRN123YK, PBRN123YS, PDTA113EK, PDTA113ES
Keywords - PBRN113ES pdf specs
PBRN113ES cross reference
PBRN113ES equivalent finder
PBRN113ES pdf lookup
PBRN113ES substitution
PBRN113ES replacement
