PDTA114TS Datasheet. Specs and Replacement

Type Designator: PDTA114TS  📄📄 

SMD Transistor Code: TA114T

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT-54

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PDTA114TS datasheet

 ..1. Size:53K  motorola

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PDTA114TS

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114TS PNP resistor-equipped transistor 1998 May 15 Product specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TS FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit desi... See More ⇒

 ..2. Size:53K  philips

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PDTA114TS

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114TS PNP resistor-equipped transistor 1998 May 15 Product specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TS FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit desi... See More ⇒

 ..3. Size:80K  nxp

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PDTA114TS

PDTA114T series PNP resistor-equipped transistors; R1 = 10 k , R2 = open Rev. 07 20 April 2007 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTA114TE SOT416 SC-75 - PDTC114TE PDTA114TK SOT346 SC-59A TO-236 PDTC114... See More ⇒

 6.1. Size:29K  motorola

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PDTA114TS

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit design R... See More ⇒

Detailed specifications: PBRN123ES, PBRN123YK, PBRN123YS, PDTA113EK, PDTA113ES, PDTA113ZK, PDTA113ZS, PDTA114TK, 2N2222A, PDTA123TK, PDTA123TS, PDTA123YK, PDTA123YS, PDTA124TEF, PDTA124TK, PDTA124TS, PDTA124XEF

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