PDTC123YK Datasheet. Specs and Replacement

Type Designator: PDTC123YK  📄📄 

SMD Transistor Code: 31

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SOT-346

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PDTC123YK datasheet

 ..1. Size:137K  nxp

pdtc123yk pdtc123ys.pdf pdf_icon

PDTC123YK

PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883 ... See More ⇒

 6.1. Size:137K  nxp

pdtc123y.pdf pdf_icon

PDTC123YK

PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883 ... See More ⇒

 7.1. Size:54K  motorola

pdtc123jef 1.pdf pdf_icon

PDTC123YK

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒

 7.2. Size:55K  motorola

pdtc123je 3.pdf pdf_icon

PDTC123YK

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3... See More ⇒

Detailed specifications: PDTC115ES, PDTC115TK, PDTC115TS, PDTC123EEF, PDTC123EK, PDTC123ES, PDTC123TK, PDTC123TS, S9013, PDTC123YS, PDTC124TEF, PDTC124TK, PDTC124TS, PDTC124XEF, PDTC124XK, PDTC124XS, PDTC143TEF

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