2SA1067 Specs and Replacement
Type Designator: 2SA1067
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 140 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SA1067 datasheet
..1. Size:146K jmnic
2sa1067.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1067 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) ... See More ⇒
..2. Size:207K inchange semiconductor
2sa1067.pdf
isc Silicon PNP Power Transistor 2SA1067 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
8.1. Size:265K renesas
2sa1069a-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.2. Size:234K renesas
2sa1069-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.3. Size:136K nec
2sa1069 2sa1069a.pdf
DATA SHEET SILICON POWER TRANSISTORS 2SA1069, 1069A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1069/1069A are the mold power transistors developed for high-speed switching, and is ideal for use as a driver in devices such Part No. Pac age as switching regulators, DC/DC converters, and high-frequency power 2SA1069 -220AB amplifiers. 2SA10... See More ⇒
8.6. Size:161K jmnic
2sa1069 2sa1069a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION With TO-220 package Complement to type 2SC2516/2516A Low collector saturation voltage APPLICATIONS Switching regulators DC-DC converters High-frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (... See More ⇒
8.7. Size:152K jmnic
2sa1065.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1065 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency Complement to type 2SC2489 APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3... See More ⇒
8.8. Size:260K jmnic
2sa1060.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1060 DESCRIPTION With TO-3PN package Complement to type 2SC2484 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat... See More ⇒
8.9. Size:146K jmnic
2sa1068.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1068 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) ... See More ⇒
8.10. Size:152K jmnic
2sa1064.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1064 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2SC2488 High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3... See More ⇒
8.11. Size:173K jmnic
2sa1063.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1063 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maxim... See More ⇒
8.12. Size:113K jmnic
2sa1061.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 DESCRIPTION With TO-3PN package Complement to type 2SC2485 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum r... See More ⇒
8.13. Size:158K jmnic
2sa1062.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1062 DESCRIPTION With TO-3PN package Complement to type 2SC2486 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (T... See More ⇒
8.14. Size:213K inchange semiconductor
2sa1065.pdf
isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒
8.15. Size:221K inchange semiconductor
2sa1069a.pdf
isc Silicon PNP Power Transistor 2SA1069A DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXI... See More ⇒
8.16. Size:208K inchange semiconductor
2sa1060.pdf
isc Silicon PNP Power Transistor 2SA1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2484 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.17. Size:182K inchange semiconductor
2sa1069a-z.pdf
isc Silicon PNP Power Transistor 2SA1069A-Z DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency powe... See More ⇒
8.18. Size:207K inchange semiconductor
2sa1068.pdf
isc Silicon PNP Power Transistor 2SA1068 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
8.19. Size:213K inchange semiconductor
2sa1064.pdf
isc Silicon PNP Power Transistor 2SA1064 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2488 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒
8.20. Size:199K inchange semiconductor
2sa1063.pdf
isc Silicon PNP Power Transistor 2SA1063 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2487 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒
8.21. Size:208K inchange semiconductor
2sa1061.pdf
isc Silicon PNP Power Transistor 2SA1061 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2485 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
8.22. Size:93K inchange semiconductor
2sa1069-a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION With TO-220 package Complement to type 2SC2516/2516A Low collector saturation voltage APPLICATIONS Switching regulators DC-DC converters High-frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 sim... See More ⇒
8.23. Size:182K inchange semiconductor
2sa1069-z.pdf
isc Silicon PNP Power Transistor 2SA1069-Z DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency power... See More ⇒
8.24. Size:217K inchange semiconductor
2sa1069.pdf
isc Silicon PNP Power Transistor 2SA1069 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM... See More ⇒
8.25. Size:208K inchange semiconductor
2sa1062.pdf
isc Silicon PNP Power Transistor 2SA1062 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2486 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
Detailed specifications: 2SA106, 2SA1060, 2SA1061, 2SA1062, 2SA1063, 2SA1064, 2SA1065, 2SA1066, 2SC2240, 2SA1068, 2SA1069, 2SA1069A, 2SA107, 2SA1072, 2SA1072A, 2SA1073, 2SA1074
Keywords - 2SA1067 pdf specs
2SA1067 cross reference
2SA1067 equivalent finder
2SA1067 pdf lookup
2SA1067 substitution
2SA1067 replacement
