RT1N130M Datasheet. Specs and Replacement

Type Designator: RT1N130M  📄📄 

SMD Transistor Code: NP

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC-70

 RT1N130M Substitution

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RT1N130M datasheet

 ..1. Size:126K  isahaya

 rt1n130c rt1n130m rt1n130s rt1n130u.pdf pdf_icon

RT1N130M

Transistor RT1N130X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N130X is a one chip transistor RT1N130C with built-in bias resistor,PNP type is RT1P130X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=1k ). APPLICATION Inverted circuit,switching circui... See More ⇒

 8.1. Size:139K  isahaya

 rt1n137p.pdf pdf_icon

RT1N130M

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ... See More ⇒

 8.2. Size:146K  isahaya

 rt1n136c rt1n136m rt1n136s rt1n136u.pdf pdf_icon

RT1N130M

Transistor RT1N136X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N136X is a one chip transistor RT1N136C with built-in bias resistor,PNP type is RT1P136X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=1k ,R2=10k ). APPLICATION Inverted circuit,switchi... See More ⇒

 8.3. Size:465K  isahaya

 rt1n137s.pdf pdf_icon

RT1N130M

RT1N137S Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 4.0 RT1N137S is a one chip transistor with built-in bias resistor, NPN type is RT1P137S. FEATURE 0.1 Built-in bias resistor R =1k , R =22k 1 2 High collector current Ic=1A 0.45 Low VCE(sat) VCE(sat)=0.3V (@Ic=300mA/IB=3mA) 2.5... See More ⇒

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Detailed specifications: PDTD113ES, PDTD123EK, PDTD123ES, PDTD123TK, PDTD123TS, PDTD123YK, PDTD123YS, RT1N130C, D882P, RT1N130S, RT1N130U, RT1N136C, RT1N136M, RT1N136S, RT1N136U, RT1N137P, RT1N137S

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