RT1N15BS Datasheet and Replacement
Type Designator: RT1N15BS
SMD Transistor Code: N15B
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 100 kOhm
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: TO92S
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RT1N15BS Datasheet (PDF)
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TransistorRT1N150X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N150X is a one chip transistor RT1N150C with built-in bias resistor,PNP type is RT1P150X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=100k). APPLICATION Inverted circuit,switching circ
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TransistorRT1N151X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N151X is a one chip transistor RT1N151C with built-in bias resistor,PNP type is RT1P151X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=100k,R2=100k). APPLICATION Inverted circuit,swit
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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: JC501Q | RN2111ACT | BUR607D | MJ13332 | DMC5610N | 2N2799 | L9015SLT3G
Keywords - RT1N15BS transistor datasheet
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History: JC501Q | RN2111ACT | BUR607D | MJ13332 | DMC5610N | 2N2799 | L9015SLT3G



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