2SA1075
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1075
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 120
W
Maximum Collector-Base Voltage |Vcb|: 120
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 12
A
Max. Operating Junction Temperature (Tj): 135
°C
Transition Frequency (ft): 60
MHz
Collector Capacitance (Cc): 300
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
MT-200
2SA1075
Transistor Equivalent Substitute - Cross-Reference Search
2SA1075
Datasheet (PDF)
..2. Size:128K jmnic
2sa1075 2sa1076.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base Coll
..3. Size:178K inchange semiconductor
2sa1075 2sa1076.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Ba
..4. Size:181K inchange semiconductor
2sa1075.pdf
isc Silicon PNP Power Transistor 2SA1075DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
8.4. Size:149K jmnic
2sa1079.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION With TO-220 package High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
8.5. Size:156K jmnic
2sa1073.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
8.6. Size:150K jmnic
2sa1078.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1078 DESCRIPTION With TO-220 package Complement to type 2SC2528 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl
8.7. Size:156K jmnic
2sa1072.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
8.8. Size:152K jmnic
2sa1077.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION With TO-220 package Complement to type 2SC2527 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mou
8.9. Size:149K jmnic
2sa1074.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Col
8.10. Size:219K inchange semiconductor
2sa1076.pdf
isc Silicon PNP Power Transistor 2SA1076DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
8.11. Size:215K inchange semiconductor
2sa1079.pdf
isc Silicon PNP Power Transistor 2SA1079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2529Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
8.12. Size:163K inchange semiconductor
2sa1072 2sa1073.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2
8.13. Size:312K inchange semiconductor
2sa1073.pdf
isc Silicon PNP Power Transistor 2SA1073DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2523Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
8.14. Size:215K inchange semiconductor
2sa1078.pdf
isc Silicon PNP Power Transistor 2SA1078DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2528Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
8.15. Size:206K inchange semiconductor
2sa1072.pdf
isc Silicon PNP Power Transistor 2SA1072DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2522Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
8.16. Size:213K inchange semiconductor
2sa1077.pdf
isc Silicon PNP Power Transistor 2SA1077DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiersSwitching regulatorsD
8.17. Size:168K inchange semiconductor
2sa1074.pdf
isc Silicon PNP Power Transistor 2SA1074DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio stepping motor and otherlinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME
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