All Transistors. RT1N436M Datasheet

 

RT1N436M Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT1N436M
   SMD Transistor Code: NH
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-70

 RT1N436M Transistor Equivalent Substitute - Cross-Reference Search

   

RT1N436M Datasheet (PDF)

 ..1. Size:168K  isahaya
rt1n436c rt1n436m rt1n436s rt1n436u.pdf

RT1N436M RT1N436M

TransistorRT1N436X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N436X is a one chip transistor RT1N436C with built-in bias resistor,PNP type is RT1P436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION Inverted circuit,switc

 8.1. Size:141K  isahaya
rt1n434c rt1n434m rt1n434s rt1n434u.pdf

RT1N436M RT1N436M

TransistorRT1N434X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N434X is a one chip transistor RT1N434C with built-in bias resistor,PNP type is RT1P434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION Inverted circuit,switc

 8.2. Size:153K  isahaya
rt1n431c rt1n431m rt1n431s rt1n431u.pdf

RT1N436M RT1N436M

TransistorRT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,swit

 8.3. Size:126K  isahaya
rt1n430c rt1n430m rt1n430s rt1n430u.pdf

RT1N436M RT1N436M

TransistorRT1N430X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N430X is a one chip transistor RT1N430C with built-in bias resistor, PNP type is RT1P430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k) APPLICATION Inverted circuit, switching cir

 8.4. Size:157K  isahaya
rt1n432c rt1n432m rt1n432s rt1n432u.pdf

RT1N436M RT1N436M

TransistorRT1N432X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N432X is a one chip transistor RT1N432C with built-in bias resistor,PNP type is RT1P432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION Inverted circuit,switc

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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