All Transistors. RT1P130S Datasheet

 

RT1P130S Datasheet and Replacement


   Type Designator: RT1P130S
   SMD Transistor Code: P130
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Maximum Collector Power Dissipation (Pc): 0.45 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-92S
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RT1P130S Datasheet (PDF)

 ..1. Size:125K  isahaya
rt1p130c rt1p130m rt1p130s rt1p130u.pdf pdf_icon

RT1P130S

TransistorRT1P130X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P130X is a one chip transistor RT1P130C with built-in bias resistor,NPN type is RT1N130X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k). APPLICATION . Inverted circuit,switching circ

 8.1. Size:120K  isahaya
rt1p137p.pdf pdf_icon

RT1P130S

ISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to person

 8.2. Size:153K  isahaya
rt1p136c rt1p136m rt1p136s rt1p136u.pdf pdf_icon

RT1P130S

TransistorRT1P136X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P136X is a one chip transistor RT1P136C with built-in bias resistor,NPN type is RT1N136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi

 8.3. Size:426K  isahaya
rt1p137s.pdf pdf_icon

RT1P130S

RT1P137S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=-1A 0.45 Low VCE(sat) VCE(sat)=-0.3V (@Ic=-300mA/IB=-3mA)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: HC8550S | GS9018 | 2SC1815E | BC337CP | 2SD2181 | HSA1015 | HIT647

Keywords - RT1P130S transistor datasheet

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