RT1P140M Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1P140M
SMD Transistor Code: P7
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-70
RT1P140M Transistor Equivalent Substitute - Cross-Reference Search
RT1P140M Datasheet (PDF)
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TransistorRT1P141X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P141X is a one chip transistor RT1P141C with built-in bias resistor,NPN type is RT1N141X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=10k). APPLICATION . Inverted circuit,swit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
