RT1P141U Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1P141U
SMD Transistor Code: P1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 150
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SC-75A
RT1P141U Transistor Equivalent Substitute - Cross-Reference Search
RT1P141U Datasheet (PDF)
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TransistorRT1P14BX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P14BX is a one chip transistor RT1P14BC with built-in bias resistor,NPN type is RT1N14BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=10k). APPLICATION Inverted circuit,switching circu
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