RT1P24BS Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1P24BS
SMD Transistor Code: P24B
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R2 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: TO-92S
RT1P24BS Transistor Equivalent Substitute - Cross-Reference Search
RT1P24BS Datasheet (PDF)
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TransistorRT1P241X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P241X is a one chip transistor RT1P241C with built-in bias resistor,NPN type is RT1N241X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=22k). APPLICATION Inverted circuit,switch
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .