RT1P430S Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1P430S
SMD Transistor Code: P430
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92S
RT1P430S Transistor Equivalent Substitute - Cross-Reference Search
RT1P430S Datasheet (PDF)
rt1p430c rt1p430m rt1p430s rt1p430u.pdf
TransistorRT1P430X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P430X is a one chip transistor RT1P430C with built-in bias resistor,NPN type is RT1N430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k). APPLICATION . Inverted circuit,switching ci
rt1p434c rt1p434m rt1p434s rt1p434u.pdf
TransistorRT1P434X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P434X is a one chip transistor RT1P434C with built-in bias resistor,NPN type is RT1N434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION . Inverted circuit,swi
rt1p436c rt1p436m rt1p436s rt1p436u.pdf
TransistorRT1P436X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNITmmRT1P436X is a one chip transistor RT1P436C with built-in bias resistor,NPN type is RT1N436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION . Inverted circuit,switc
rt1p432c rt1p432m rt1p432s rt1p432u.pdf
TransistorRT1P432X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P432X is a one chip transistor RT1P432C with built-in bias resistor,NPN type is RT1N432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION . Inverted circuit,swi
rt1p431c rt1p431m rt1p431s.pdf
TransistorRT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,s
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB1344 | 2SA1396 | TED1602B | ST2SA1012 | HEPS0026 | CSB564A | ECG193
History: 2SB1344 | 2SA1396 | TED1602B | ST2SA1012 | HEPS0026 | CSB564A | ECG193
LIST
Last Update
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D